IDW75E60 power semiconductors 1 rev. 2.1 nov 09 features: ? 600 v emcon technology ? fast recovery ? soft switching ? low reverse recovery charge ? low forward voltage ? 175 c junction operating temperature ? easy paralleling ? pb-free lead plating; rohs compliant ? complete product spectrum and pspice models: http://www.infineon.com/emcon/ applications: ? welding ? motor drives type v rrm i f v f ,tj=25c t j,max marking package IDW75E60 600v 75a 1.65v 175 c d75e60 pg-to-247-3 maximum ratings parameter symbol value unit repetitive peak reverse voltage v rrm 600 v continuous forward current t c = 25 c t c = 90 c t c = 100 c i f 120 82 75 a surge non repetitive forward current t c = 25 c, t p = 10 ms, sine halfwave i fsm 220 a maximum repetitive forward current t c = 25 c, t p limited by t j,max , d = 0.5 i frm 225 a power dissipation t c = 25 c t c = 90 c t c = 100 c p tot 300 170 150 w operating junction and storage temperature t j, t stg -55?+175 c soldering temperature 1.6mm (0.063 in.) from case for 10 s t s 260 c a c pg-to-247-3
IDW75E60 power semiconductors 2 rev. 2.1 nov 09 thermal resistance parameter symbol conditions max. value unit characteristic thermal resistance, junction ? case r thjc 0.5 thermal resistance, junction ? ambient r thja 40 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v rrm i r =0.25ma 600 - - diode forward voltage v f i f =75a t j =25 c t j =175 c - - 1.65 1.65 2.0 - v reverse leakage current i r v r =600v t j =25 c t j =175 c - - - - 40 1000 a dynamic electrical characteristics diode reverse recovery time t rr - 121 - ns diode reverse recovery charge q rr - 2.4 - c diode peak reverse recovery current i rr - 38.5 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =25 c v r =400v, i f =75a, di f /dt =1460a/s - 921 - a/s diode reverse recovery time t rr - 155 - ns diode reverse recovery charge q rrm - 4.4 - c diode peak reverse recovery current i rr - 46.6 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =125 c v r =400v, i f =75a, di f /dt =1460a/s - 960 - a/s diode reverse recovery time t rr - 182 - ns diode reverse recovery charge q rrm - 5.8 - c diode peak reverse recovery current i rr - 56.2 - a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =175 c v r =400v, i f =75a, di f /dt =1460a/s - 1013 - a/s
IDW75E60 power semiconductors 3 rev. 2.1 nov 09 p tot , power dissipation 25c 50c 75c 100c 125c 150c 0w 50w 100w 150w 200w 250w 300w i f , forward current 25c 75c 125c 0a 30a 60a 90a 120a t c , case temperature t c , case temperature figure 1. power dissipation as a function of case temperature ( t j 175 c) figure 2. diode forward current as a function of case temperature ( t j 175 c) i f , forward current 0v 1v 2v 0a 50a 100a 150a 200a 175c t j =25c v f , forward voltage 0c 50c 100c 150c 0.0v 0.5v 1.0v 1.5v 2.0v 75a i f =150a 37.5a v f , forward voltage t j , junction temperature figure 3. typical diode forward current as a function of forward voltage figure 4. typical diode forward voltage as a function of junction temperature
IDW75E60 power semiconductors 4 rev. 2.1 nov 09 t rr , reverse recovery time 1000a/s 1500a/s 0ns 50ns 100ns 150ns 200ns t j =25c t j =175c q rr , reverse recovery charge 1000a/s 1500a/s 0c 1c 2c 3c 4c 5c t j =25c t j =175c di f /dt , diode current slope di f /dt , diode current slope figure 5. typical reverse recovery time as a function of diode current slope ( v r =400v, i f =75a, dynamic test circuit in figure e) figure 6. typical reverse recovery charge as a function of diode current slope ( v r = 400v, i f = 75a, dynamic test circuit in figure e) i rr , reverse recovery current 1000a/s 1500a/s 0a 10a 20a 30a 40a 50a 60a t j =25c t j =175c di rr /dt , diode peak rate of fall of reverse recovery current 1000a/s 1500a/s 0a/s -200a/s -400a/s -600a/s -800a/s - 1000a/s - 1200a/s t j =25c t j =175c di f /dt , diode current slope di f /dt , diode current slope figure 7. typical reverse recovery current as a function of diode current slope ( v r = 400v, i f = 75a, dynamic test circuit in figure e) figure 8. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r =400v, i f =75a, dynamic test circuit in figure e)
IDW75E60 power semiconductors 5 rev. 2.1 nov 09 z thjc , transient thermal resistance 1 s10 s 100 s 1ms 10ms 100ms 10 -2 k/w 10 -1 k/w single pulse 0.01 0.02 0.05 0.1 0.2 d =0.5 t p , pulse width figure 9. diode transient thermal impedance as a function of pulse width ( d = t p / t ) r ,(k/w) , (s) 0.0556 0.1495 0.1757 0.02797 0.12374 3.623 e-3 0.12192 3.276 e-4 0.02305 2.635 e-5 c 1 = r 1 r 1 r 2 c 2 = r 2
IDW75E60 power semiconductors 6 rev. 2.1 nov 09
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